1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analog memory capacitor based on field-configurable ion-doped polymers
Rent:
Rent this article for
USD
10.1063/1.3268433
/content/aip/journal/apl/95/21/10.1063/1.3268433
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268433
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device capacitances as a function of the dc voltage applied to (a) a memory capacitor with an structure (inset) and (b) a memory capacitor with an structure (inset).

Image of FIG. 2.
FIG. 2.

The capacitance of an memory capacitor as a function of the number of voltage pulses applied to the device. The pulse amplitudes are fixed at (a) , , , , and , and (b) , , , , and . (c) The capacitances of a memory capacitor configured to different values as a function of time in volatility tests at and .

Image of FIG. 3.
FIG. 3.

Device capacitances as a function of the dc voltage bias applied to control devices with , , , and structures (from top to bottom).

Loading

Article metrics loading...

/content/aip/journal/apl/95/21/10.1063/1.3268433
2009-11-25
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analog memory capacitor based on field-configurable ion-doped polymers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268433
10.1063/1.3268433
SEARCH_EXPAND_ITEM