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Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
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10.1063/1.3268438
/content/aip/journal/apl/95/21/10.1063/1.3268438
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268438
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Figures

Image of FIG. 1.
FIG. 1.

(a) The SEM image of ZnO:P nanonail array grown on low resistivity n-Si substrate. The scale bars were and 500 nm, respectively. (b) The XRD profile of the ZnO:P nanonail array grown on the low resistivity n-Si substrate. The XRD pattern showed a strong and sharp peak from the (002) plane, which confirmed the high quality of single-crystal ZnO nanonails with the growth axis along the -direction. (c) The EDX spectrum of the ZnO:P nanonail array grown on the low resistivity n-Si substrate. The existence of phosphorus dopants was confirmed. (d) The HRTEM image taken from the single ZnO:P nanonail body. The inset was the electron diffraction pattern, which indicated that the ZnO nanonail was a wurtzite type structure grown along the -axis direction.

Image of FIG. 2.
FIG. 2.

Current-voltage curve of the p-ZnO:P nanonail array/n-Si heterojunction. The turn-on voltage was about 2.5 V. The inset showed the schematic diagram of the device structure of the p-ZnO:P nanonail array/n-Si.

Image of FIG. 3.
FIG. 3.

(a) Ultraviolet EL spectra obtained from the p-ZnO:P nanonail array/n-Si structure with injection current of 0, 13, and 24 mA. The spectra were offset by 50 intensity units for clarity. When the current reached 24 mA, lasing behavior appeared on the spectra. The three peaks centered at 386.8, 390.4, and 394.0 nm represented different lasing modes. The FWHMs of the three peaks were 0.7, 0.9, and 0.5 nm, respectively (the minimum resolving power of the fluorescence meter was 0.2 nm), and the space of the peaks was 3.6 nm. (b) The whole EL spectrum of the p-ZnO:P nanonail array/n-Si structure when the corresponding applied current was 24 mA. The inset showed the EL intensity vs the corresponding applied forward-current.

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/content/aip/journal/apl/95/21/10.1063/1.3268438
2009-11-25
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268438
10.1063/1.3268438
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