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Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition
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10.1063/1.3268449
/content/aip/journal/apl/95/21/10.1063/1.3268449
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268449
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ge spectrum of a DIW etched Ge(100) surface showing reduction of Ge–O following TMA and water pulses.

Image of FIG. 2.
FIG. 2.

Ge spectrum of a clean Ge(100) surface showing reduction of Ge–O following TMA and water pulses.

Image of FIG. 3.
FIG. 3.

Ge spectrum of GeON passivated Ge(100) surface before and after the first TMA pulse and subsequent cycles. The spectra for first TMA pulse and the following precursor exposures up to 1 nm film growth are overlapped .

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/content/aip/journal/apl/95/21/10.1063/1.3268449
2009-11-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268449
10.1063/1.3268449
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