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Interaction of capping layers with gate dielectrics
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10.1063/1.3268456
/content/aip/journal/apl/95/21/10.1063/1.3268456
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268456
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MEIS spectrum showing the La backscatter peak of after various anneals. La diffuses into the stack at elevated temperatures, resulting in a tail on the surface La peak. For the highest temperature anneals, an interface peak is observed. Inset shows simulations for La confined to the (solid curve), and La diffusion extending into the interlayer (IL).

Image of FIG. 2.
FIG. 2.

La concentration in surface and interface regions as a function of annealing time. Filled symbols are surface concentrations, hollow symbols are IL concentrations. Line types correspond to different initial La coverages.

Image of FIG. 3.
FIG. 3.

Schematic depiction of energy levels used to deduce the Fermi level position in the substrate and the metal/dielectric barrier. Positions are not drawn to scale.

Image of FIG. 4.
FIG. 4.

Binding energies for Si2p (top) and Hf4f (bottom) core levels as a function of post-metal anneal temperature. Only samples that have been preannealed show a significant shift in the Si2p level, indicating that La indiffusion is needed to activate the threshold modification. On the right axis, binding energies are referenced to substrate Fermi level location (top) and metal-dielectric barrier (bottom).

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/content/aip/journal/apl/95/21/10.1063/1.3268456
2009-11-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction of La2O3 capping layers with HfO2 gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268456
10.1063/1.3268456
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