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Surface transformation and inversion domain boundaries in gallium nitride nanorods
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10.1063/1.3268467
/content/aip/journal/apl/95/21/10.1063/1.3268467
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268467
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

GaN nanorod with the WZ structure.

Image of FIG. 2.
FIG. 2.

(a) Section of GaN nanorod with two wurtzite-structured domains [the core columnar domain (CCD) and the outer tubular domain (OTD)] separated by an inversion domain boundary (IDB); (b) atomistic arrangement on cross-section showing the structure of the IDB.

Image of FIG. 3.
FIG. 3.

Inversion domain boundary distributions in GaN nanorods of different lateral dimensions () and lengths (below each pattern).

Image of FIG. 4.
FIG. 4.

Average free energies per atom for the initial and transformed configurations of GaN layers and nanorods of the same length (144.5 Å) at different lateral dimensions, also shown is the critical length below which the IDB is observed in GaN nanorods.

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/content/aip/journal/apl/95/21/10.1063/1.3268467
2009-11-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface transformation and inversion domain boundaries in gallium nitride nanorods
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3268467
10.1063/1.3268467
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