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GaN nanorod with the WZ structure.
(a) Section of GaN nanorod with two wurtzite-structured domains [the core columnar domain (CCD) and the outer tubular domain (OTD)] separated by an inversion domain boundary (IDB); (b) atomistic arrangement on cross-section showing the structure of the IDB.
Inversion domain boundary distributions in GaN nanorods of different lateral dimensions () and lengths (below each pattern).
Average free energies per atom for the initial and transformed configurations of GaN layers and nanorods of the same length (144.5 Å) at different lateral dimensions, also shown is the critical length below which the IDB is observed in GaN nanorods.
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