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Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing
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10.1063/1.3268791
/content/aip/journal/apl/95/22/10.1063/1.3268791
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3268791
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Figures

Image of FIG. 1.
FIG. 1.

The TMR and exchange-coupling field of MTJs prepared without in situ annealing. [(a)–(d)] TMR curves with four different postdeposition annealing temperatures, , , , and , respectively. (e) The vs the Ru thickness of MTJs annealed at and (f) the of an MTJ prepared with varying the temperature of postdeposition annealing. For comparison, the of MTJs prepared with in situ annealing (square solids) is shown.

Image of FIG. 2.
FIG. 2.

hysteresis loops and TMR curves of MTJs consisting of buffer/CoFeB/MgO/CoFeB/Ru /CoFe/IrMn/cap prepared [(a) and (b)] without in situ annealing, [(c) and (d)] with in situ annealing at , and [(e) and (f)] with in situ annealing at . All samples are postannealed at for 30 min.

Image of FIG. 3.
FIG. 3.

Temperature dependence and bias dependence of MTJs consisting of buffer/CoFeB/MgO/CoFeB/Ru in situ annealing/CoFe/IrMn/cap (a) TMR, and (b) vs temperature. (c) Normalized TMR vs applied voltage bias at 300 K. Electrons tunnel into the top reference layer (bottom free layer) at the positive (negative) voltage range.

Image of FIG. 4.
FIG. 4.

TMR curves of MTJs prepared with in situ annealing. The MTJs consist of buffer/CoFeB/MgO/CoFeB/Ru [(a) , (b) , and (c) ] in situ annealing at for 10 min/Ru /CoFe/IrMn/cap.

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/content/aip/journal/apl/95/22/10.1063/1.3268791
2009-12-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3268791
10.1063/1.3268791
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