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The TMR and exchange-coupling field of MTJs prepared without in situ annealing. [(a)–(d)] TMR curves with four different postdeposition annealing temperatures, , , , and , respectively. (e) The vs the Ru thickness of MTJs annealed at and (f) the of an MTJ prepared with varying the temperature of postdeposition annealing. For comparison, the of MTJs prepared with in situ annealing (square solids) is shown.
hysteresis loops and TMR curves of MTJs consisting of buffer/CoFeB/MgO/CoFeB/Ru /CoFe/IrMn/cap prepared [(a) and (b)] without in situ annealing, [(c) and (d)] with in situ annealing at , and [(e) and (f)] with in situ annealing at . All samples are postannealed at for 30 min.
Temperature dependence and bias dependence of MTJs consisting of buffer/CoFeB/MgO/CoFeB/Ru in situ annealing/CoFe/IrMn/cap (a) TMR, and (b) vs temperature. (c) Normalized TMR vs applied voltage bias at 300 K. Electrons tunnel into the top reference layer (bottom free layer) at the positive (negative) voltage range.
TMR curves of MTJs prepared with in situ annealing. The MTJs consist of buffer/CoFeB/MgO/CoFeB/Ru [(a) , (b) , and (c) ] in situ annealing at for 10 min/Ru /CoFe/IrMn/cap.
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