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Current density vs voltage characteristics of the ITO/InP thin film and control solar cells under 1 sun, AM1.5G simulated solar illumination. Inset: EQE as a function of wavelength of the ITO/InP thin film and control solar cells.
Open circuit voltage , fill factor , short circuit current , and power conversion efficiency as functions of illumination intensity under a AM1.5G simulated solar spectrum of the (a) thin film ITO/InP (b) control solar cell.
Short circuit current and power conversion efficiency of the thin film ITO/InP solar cell after either the compressive (bending inward) or tensile (bending outward) stress test under 1 sun, AM1.5G simulated solar illumination. Inset: Diagram of the bending test, and its corresponding microscope images of the epitaxial InP cell after bending over a 0.3 cm radius.
Comparison of different thin-film solar cell performances on light-weight substrates. The of the CIGS cell is calculated by assuming that the density of CIGS film is , and the top metal contact consists of a thick Al/Ni stack with 5% device coverage (Ref. 7).
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