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Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals
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10.1063/1.3270525
/content/aip/journal/apl/95/22/10.1063/1.3270525
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3270525
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TPF in the vertical direction for PCs with different lattice constants. The lattice constants corresponding to the spectra are labeled. Inset (a): Comparison of the TPF spectrum from PC with lattice constant 550 nm and that from blank material. Inset (b): Photonic crystal on SiN membrane fabricated by electron beam lithography and RIE. The lattice constant is 650 nm and the radius of the hole is 455 nm.

Image of FIG. 2.
FIG. 2.

Enhancement factor of TPF and peak wavelength of TPF spectrum vs lattice constant.

Image of FIG. 3.
FIG. 3.

TPF from QDs on PC with a lattice constant of 1250 nm and radius of 375 nm under different excitation wavelength. The excitation wavelengths corresponding lines are inserted.

Image of FIG. 4.
FIG. 4.

Photonic band structure of SiN PC slab with for even mode; is the lattice constant and is the radius of the hole.

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/content/aip/journal/apl/95/22/10.1063/1.3270525
2009-12-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3270525
10.1063/1.3270525
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