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(a) Schematic diagram of the mask pattern. The SEM image of grown GaN epilayer is shown in the inset. (b) A schematic of the procedure of the TFAP structure. (c) Bird’s eye SEM image (white dash line: first air prism range, black dash line: second air prism range). (d) Cross-sectional SEM image of black line of (c).
Diffuse reflectance spectra of different LED structures. The cross-sectional SEM images of LED I, II, and III are shown the inset.
(a) Typical characteristic of the LED with different air prisms and conventional-LEDs. (b) Plan view of the optical microscope image of emitting TFAP-LED at a high injection current of 100 mA.
Possible photon path of the (a) LED-II, (b) LED-I, and (c) LED-III.
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