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Well-width dependence of valley splitting in Si/SiGe quantum wells
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10.1063/1.3270539
/content/aip/journal/apl/95/22/10.1063/1.3270539
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3270539

Figures

Image of FIG. 1.
FIG. 1.

(a) Low temperature longitudinal resistivity of the 20 nm sample. The electron density is in units of . Arrows indicate magnetic fields for integer LL filling factors. (b) Single particle LL energy diagram. LLs spaced by the cyclotron energy are split by and . The Fermi energy is located in the valley splitting for odd integer values of . For and , it is in the cyclotron gap and the Zeeman splitting, respectively. (c) of the 5.3 nm sample. (d) of the 4 nm sample.

Image of FIG. 2.
FIG. 2.

(a) Typical temperature dependence of minima of the QH states at and 3. Arrhenius plots for different values of , , and . The solid lines are fits to the data. (b) The obtained energy gap for four samples with different well widths. The solid symbols represent the data obtained at and the open symbols are for .

Tables

Generic image for table
Table I.

Bare valley splitting estimated from the Shubnikov–de Haas oscillations. The average electric field in the QW region at the corresponding backgate voltage is also presented for future calculations.

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/content/aip/journal/apl/95/22/10.1063/1.3270539
2009-12-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Well-width dependence of valley splitting in Si/SiGe quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/22/10.1063/1.3270539
10.1063/1.3270539
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