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Hot electron effect in nanoscopically thin photovoltaic junctions
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10.1063/1.3267144
/content/aip/journal/apl/95/23/10.1063/1.3267144
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3267144
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of ultrathin junctions. (a) Junctions with -layer thickness and 10 nm, under AM1.5 illumination. (b) Junction with , under blue and red laser illumination. The inset shows a zoomed-in section of the main plot near .

Image of FIG. 2.
FIG. 2.

Open-circuit voltage change vs junction thickness. from all PV experiments involving lasers, normalized by the difference in the corresponding photon energies per charge , vs -layer thickness for fixed . Symbols represent the mean values, and the error bars are obtained from the standard deviations. The solid line is obtained by using Eq. (1). The largest effect measured was for .

Image of FIG. 3.
FIG. 3.

Variation of short circuit current density with total junction thickness. vs under AM1.5 illumination, as measured from (squares), calculated by integrating (triangles), integrated optical absorbance , normalized to the value (circles), and normalized power density as modeled in Ref. 17 (dash).

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/content/aip/journal/apl/95/23/10.1063/1.3267144
2009-12-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot electron effect in nanoscopically thin photovoltaic junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3267144
10.1063/1.3267144
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