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Trapping-detrapping fluctuations in organic space-charge layers
11.R. W. I. de Boer, M. Jochemsen, T. M. Klapwijk, A. F. Morpurgo, J. Niemax, A. K. Tripathi, and J. Pflaum, J. Appl. Phys. 95, 1196 (2004).
22.O. D. Jurchescu, B. H. Hamadani, H. D. Xiong, S. K. Park, S. Subramanian, N. M. Zimmerman, J. E. Anthony, T. N. Jackson, and D. J. Gundlach, Appl. Phys. Lett. 92, 132103 (2008).
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A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.
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