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Organic vapor phase deposition for the growth of large area organic electronic devices
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1.
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FIG. 1.

(a) Cross-section schematic of the experimental mid-scale OVPD system. The reactor chamber diameter is 250 mm. (b) Cross-section of the deposition source plenum. The source crucible is linearly translated along a temperature gradient heater to control organic source partial pressure.

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FIG. 2.

(a) Measured (data points) and calculated (lines) material utilization efficiency for growth in the automated OVPD system as a function of total flow rate at pressure , and as a function of at . Also shown is the deposition thickness profiles of 100 nm thick films of grown on a 200 mm Si wafer at and (top, right axes). The experimental uniformity of the film is ±2.3% with rotation, and 5.0% without rotation. (b) Forward viewing external quantum (symbols) and luminous power efficiency (lines) of OVPD and VTE grown, green emitting PHOLEDs. Devices with active area grown by OVPD (circle, solid line) and by VTE (triangle, short dash); device with active area (inset) grown by OVPD (square, dash-dot).

Image of FIG. 3.

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FIG. 3.

(a) Schematic of the continuum model simulations of a Gen-6 OVPD deposition tool along with the simulation mesh. (b) Simulated velocity and diffusive flux fields for pressure, , carrier gas flow rate, , and chamber length to width ratio, . (c) Simulated deposition uniformity as a function of flow rate ( in SCCM) and chamber dimensions for (lines are guides to the eye). (d) Series of deposition profiles as a function of flow rate ( in sccm) at , and . With increasing flow rate, the deposition profile approaches Gaussian as the flow-stream becomes jetlike.

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/content/aip/journal/apl/95/23/10.1063/1.3271797
2009-12-11
2014-04-17

Abstract

We demonstrate that material utilization efficiencies of 50% and deposition nonuniformities are achievable over substrate diameters of 200 mm using a simplified, organic vapor phase deposition (OVPD) system. The OVPD system is used to demonstrate doped electrophosphorescent organic light emitting diodes whose performance is comparable to those grown by vacuum thermal evaporation. Through continuum modeling, we demonstrate that analogous systems whose chamber dimensions are comparable to the substrate width are scalable to substrate sizes of at least with deposition nonuniformities between 1.5% and 2.5%. These results indicate that OVPD is useful in the large area deposition of displays, lighting, and other organic electronic devices.

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Scitation: Organic vapor phase deposition for the growth of large area organic electronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3271797
10.1063/1.3271797
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