1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The origin and evolution of V-defects in epilayers grown by metalorganic chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.3272017
/content/aip/journal/apl/95/23/10.1063/1.3272017
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3272017
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional bright-field TEM images of sample A taken under two-beam diffraction conditions at the same area. (a) and (b) . and m denote pure edge and mixed dislocations, respectively. The dashed line delineates the interface.

Image of FIG. 2.
FIG. 2.

Plan-view SEM images of layers with thicknesses of (a) 200 (sample A), (b) 110 (sample B), and (c) 60 nm (sample C), respectively. (d) The V-defect size as a function of thickness in three samples (A, B, and C). denotes the size, the distance between a pair of parallel sides of the V-defects. denotes the intercept on the vertical axis at .

Image of FIG. 3.
FIG. 3.

Schematic diagrams of the origin and evolution of V-defects associated with TDs in layers. (a) At the very early stage of layer growth; (b) separated sidewalls began to incorporate and formed an apex of V-defect; and (c) the successive growth after incorporation. and s (m) denote pure edge, pure screw (mixed) dislocations, respectively.

Image of FIG. 4.
FIG. 4.

Cross-sectional bright-field TEM images of sample D taken under two-beam diffraction conditions at the same area. (a) and (b) . (c) Cross-sectional HAADF STEM image of sample D taken in zone axis. The declining arrows indicate small V-defects independent of TDs. The horizontal arrows highlight the short dark contrast following small V-defects. The dashed line delineates the interface.

Loading

Article metrics loading...

/content/aip/journal/apl/95/23/10.1063/1.3272017
2009-12-09
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3272017
10.1063/1.3272017
SEARCH_EXPAND_ITEM