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(a) Local density of states for showing the formation of hole bound states in the barrier region. The white line materializes the barrier profile. (b) Transmission coefficient as a function of energy . The structure is unbiased.
Conductance vs Fermi energy (a) and barrier height (b) for barrier widths (solid) and 40 nm (dashed lines). Other parameters are given in the figures. (c) Conductance plotted as a function of for (dashed) and 0.4 eV (solid line). Everywhere, . The conductance unit is .
Evolution of transmission coefficient for different incident angles in two cases: (a) and 40 nm (b). Everywhere, .
characteristics modulated by for (a) and 40 nm (b). Parameters are given in the figures. (c) Transconductance vs for in three cases: (solid), 80 (dashed), and 105 mV (dashed-dotted line). The symbols (●) corresponds to the results obtained at the temperature of 77 K and . Everywhere, .
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