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InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling
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10.1063/1.3274137
/content/aip/journal/apl/95/23/10.1063/1.3274137
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3274137
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL peak energies of the GaN barrier and InGaN barrier samples as a function of an external bias voltage. The dashed lines are obtained by fitting. The inset shows the time-integrated PL spectra of the (a) GaN barrier and (b) InGaN barrier samples as a function of an external bias voltage. The dashed lines are guides for the eye.

Image of FIG. 2.
FIG. 2.

Calculated tunneling times and experimental integrated PL intensities as a function of an external bias voltage for the GaN barrier and InGaN barrier samples.

Image of FIG. 3.
FIG. 3.

PL lifetimes of the GaN barrier and InGaN barrier samples as a function of an external bias voltage. The inset shows the TRPL spectra of the (a) GaN barrier and (b) InGaN barrier samples as a function of an external bias voltage.

Image of FIG. 4.
FIG. 4.

(a) Optical output power and (b) external quantum efficiency of the GaN barrier and InGaN barrier samples as a function of forward current density.

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/content/aip/journal/apl/95/23/10.1063/1.3274137
2009-12-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/23/10.1063/1.3274137
10.1063/1.3274137
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