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Flexible pentacene organic thin film transistor circuits fabricated directly onto elastic silicone membranes
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FIG. 1.

Schematic cross section of a pentacene field-effect transistor on an elastomeric substrate employing Parylene C as gate dielectric. Inset: top view of a transistor channel of width , and length .

Image of FIG. 2.

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FIG. 2.

AFM scan of the pentacene TFT channel stack on PDMS. The multilayer is formed of thick PDMS, thick gold, thick parylene C and thick pentacene (in a bottom-up stacking).

Image of FIG. 3.

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FIG. 3.

Electrical response of pentacene TFT on thick PDMS. (a) Transfer and (b) output characteristics of pentacene TFTs prepared on spincoated PDMS with a thick gate dielectric (parylene C) and thick pentacene.

Image of FIG. 4.

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FIG. 4.

(a) Gain of active load inverter on PDMS for drain voltages ranging from . The inlay shows the equivalent circuit diagram. (b) Voltage transfer characteristics of the inverter before (plain line), after the first (dashed line) and second (dotted line) bending cycles.

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/content/aip/journal/apl/95/24/10.1063/1.3265737
2009-12-18
2014-04-24

Abstract

We have fabricated flexible pentacene thin film transistors (OTFTs) and active load inverter circuits directly onto polydimethylsiloxane(PDMS) membranes. Goldelectrodes, parylene C gate dielectric, and pentacene films are deposited using a room temperature and all-vapor phase process on spin-coated or cast PDMS. The channel stack on PDMS is wrinkled but crack-free. The devices have good electrical properties with saturation mobilities up to , and on/off current ratio of . The OTFT circuits on PDMS withstand modest repeated bending without electrical failure.

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Scitation: Flexible pentacene organic thin film transistor circuits fabricated directly onto elastic silicone membranes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3265737
10.1063/1.3265737
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