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Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer
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10.1063/1.3265918
/content/aip/journal/apl/95/24/10.1063/1.3265918
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3265918
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

InAs QDs after growth of 55 nm GaAs buffer layer. The holes have a spacing .

Image of FIG. 2.
FIG. 2.

Schematic cross section of the sample analyzed by photoluminescence measurements. The first and the second QD layer are site-controlled, whereas the third QD layer is distributed randomly.

Image of FIG. 3.
FIG. 3.

Intensity map of a area integrated at the energy of 1.32 eV.

Image of FIG. 4.
FIG. 4.

Cryogenic temperature photoluminescence spectrum of the QD selected in Fig. 3. The inset shows a zoom of the spectrum, revealing a linewidth of about .

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/content/aip/journal/apl/95/24/10.1063/1.3265918
2009-12-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3265918
10.1063/1.3265918
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