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InAs QDs after growth of 55 nm GaAs buffer layer. The holes have a spacing .
Schematic cross section of the sample analyzed by photoluminescence measurements. The first and the second QD layer are site-controlled, whereas the third QD layer is distributed randomly.
Intensity map of a area integrated at the energy of 1.32 eV.
Cryogenic temperature photoluminescence spectrum of the QD selected in Fig. 3. The inset shows a zoom of the spectrum, revealing a linewidth of about .
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