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Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric
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/content/aip/journal/apl/95/24/10.1063/1.3268455
2009-12-16
2014-10-25

Abstract

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide hybrid dielectrics. Thermal annealing of PS films on at (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with hybrid dielectrics can operate at low-voltage with high field-effect mobilities, high on/off current ratios , and low subthreshold slopes (100 mV/dec).

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Scitation: Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3268455
10.1063/1.3268455
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