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Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric
9.J. Tardy, M. Erouej, A. L. Deman, A. Gagnalre, V. Teodorescu, M. G. Blanchin, B. Canut, A. Barau, and M. Zaharescu, Microelectron. Reliab. 47, 372 (2007).
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Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide hybrid dielectrics. Thermal annealing of PS films on at (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with hybrid dielectrics can operate at low-voltage with high field-effect mobilities, high on/off current ratios , and low subthreshold slopes (100 mV/dec).
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