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Advanced impurity trap memory with atomic-scale Ti impurities on : Evidence for the origins of enhanced memory performance
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Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HRTEM images and (b) high frequency hysteresis curves of the No Ti, , and LAO/Ti samples. The and LAO/Ti samples showed no evidence of the formation of Ti islands and/or thin film. Also, the areal density of Ti impurity traps is estimated as depicted in Fig. 1(b) .

Image of FIG. 2.
FIG. 2.

(a) Endurance characteristics up to and (b) retention characteristics at of the and LAO/Ti samples. (c) The proposed physical models for the improved memory performance. Traps generated by Ti impurities are denoted by black “X” markers.

Image of FIG. 3.
FIG. 3.

Zerbst plots for the and LAO/Ti samples based on our C-t transient measurement results. During C-t measurement, the applied voltages for accumulation and deep depletion at initial state were −1.5 and 2 V, respectively.

Image of FIG. 4.
FIG. 4.

SIMS depth profiles of our and LAO/Ti samples. The interface is correlated with the abrupt rise in SiO signal. The atomic mixing of Ti with adjacent layers was inevitable due to the sputtering method that we used for SIMS depth profiling.

Image of FIG. 5.
FIG. 5.

(a) Ti and (b) O portions of the XPS spectra of our and LAO/Ti samples.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance