Full text loading...
(a) Cross-sectional HRTEM images and (b) high frequency hysteresis curves of the No Ti, , and LAO/Ti samples. The and LAO/Ti samples showed no evidence of the formation of Ti islands and/or thin film. Also, the areal density of Ti impurity traps is estimated as depicted in Fig. 1(b) .
(a) Endurance characteristics up to and (b) retention characteristics at of the and LAO/Ti samples. (c) The proposed physical models for the improved memory performance. Traps generated by Ti impurities are denoted by black “X” markers.
Zerbst plots for the and LAO/Ti samples based on our C-t transient measurement results. During C-t measurement, the applied voltages for accumulation and deep depletion at initial state were −1.5 and 2 V, respectively.
SIMS depth profiles of our and LAO/Ti samples. The interface is correlated with the abrupt rise in SiO signal. The atomic mixing of Ti with adjacent layers was inevitable due to the sputtering method that we used for SIMS depth profiling.
(a) Ti and (b) O portions of the XPS spectra of our and LAO/Ti samples.
Article metrics loading...