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Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

FE-SEM image showing GaN layer grown on Si(211). On the image (a) a top view image of a sample with a AlN seeding layer with a GaN thickness of nominally 150 nm is shown. Obviously at the early stages of growth island growth takes place. Image (b) shows the same structure now with a compact surface structure interrupted by few pits after a total thickness of has been grown. The development from island to planar growth can be seen in a cross-sectional FE-SEM image (d). Here the threefold HT-GaN/LT-AlN layer stack marks different stages of growth whereas the AlN layers are visible as darker contrast lines. The plan-view image (c) shows a smooth surface with a crack.

Image of FIG. 2.
FIG. 2.

X-ray pole figure measurements of GaN layers of different reflections, (left) (0002) reflection and (right) reflection.

Image of FIG. 3.
FIG. 3.

Atomic arrangements of a GaN film on bulk-terminated Si(211). The free Si(211) surface consist of twofold-coordinated Si(100) and threefold-coordinated Si(111) as step and terrace surfaces, respectively. The ideal Si(211) surface has an angle of 19.47° and 35.26° to the Si(111) and Si(100) surfaces, respectively.

Image of FIG. 4.
FIG. 4.

5 K CL spectra of GaN grown on Si(211). The spectrum is dominated by luminescence at 357 nm, BSF related luminescence at and a DAP band recombination at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates