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FE-SEM image showing GaN layer grown on Si(211). On the image (a) a top view image of a sample with a AlN seeding layer with a GaN thickness of nominally 150 nm is shown. Obviously at the early stages of growth island growth takes place. Image (b) shows the same structure now with a compact surface structure interrupted by few pits after a total thickness of has been grown. The development from island to planar growth can be seen in a cross-sectional FE-SEM image (d). Here the threefold HT-GaN/LT-AlN layer stack marks different stages of growth whereas the AlN layers are visible as darker contrast lines. The plan-view image (c) shows a smooth surface with a crack.
X-ray pole figure measurements of GaN layers of different reflections, (left) (0002) reflection and (right) reflection.
Atomic arrangements of a GaN film on bulk-terminated Si(211). The free Si(211) surface consist of twofold-coordinated Si(100) and threefold-coordinated Si(111) as step and terrace surfaces, respectively. The ideal Si(211) surface has an angle of 19.47° and 35.26° to the Si(111) and Si(100) surfaces, respectively.
5 K CL spectra of GaN grown on Si(211). The spectrum is dominated by luminescence at 357 nm, BSF related luminescence at and a DAP band recombination at .
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