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Scanning electron micrograph of the typical SiC ND array on a Si surface and scheme of the assumed CZ around one ND. How to construct a ‘real’ CZ pattern?
Fragments of the simulation domain with the calculated ADF (a) and calculated FDD pattern (b). NDs are shown as small (goldish) semispheres (to scale).
Comparison of the computed ADF (a), CVT (b), and FDD (c). Note the difference in the CVT and FDD cell geometries: in FDD, the cell boundaries tend to conjugate in a single point, which is markedly different from the CVT diagram. The inset shows a magnified view of the conjugation point.
Distribution of CVT (a) and FDD (b) cell areas divided by ND areas for the case of a low influx ; distribution of CVT (c) and FDD (d) cell areas for the same ; distributions of FDD cell areas divided by ND areas for the case of medium (e) and high (f) influx.
The whole profile of the adatom density across the wide simulation domain for the deposition rates of 0.1, 10, and 100 mL/s (a) and various configurations of CZ depending on the deposition rates.
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