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Excess carrier recombination lifetime of bulk -type 3C-SiC
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Image of FIG. 1.
FIG. 1.

(a) Transient concentration in 3C-SiC samples at injection density of , when excited by 2.384 eV energy photon pulses at 295 K. Exponential fit is applied to the initial decay. In the inset, two transients on H1 sample are shown for lower injections over a longer time scale. (b) Injection dependences of transient concentration magnitude at 77 K excited by 2.53 eV. Peak concentration (squares) and saturated concentration (triangles) is shown for H2 and B4 samples. Inset shows experimental configuration for measurement under orthogonal and collinear geometries.

Image of FIG. 2.
FIG. 2.

(a) -distributions of at different times after 2.48 eV photon pulse excitation in H1 sample at 295 K. position matches to the excited surface. (b) Histogram of values from different locations and the corresponding Gaussian fit for two indicated injection concentrations .

Image of FIG. 3.
FIG. 3.

Recombination lifetime vs excess carrier density in three 3C-SiC samples. Dashed and solid line is the guide for the eye for injection dependences at 295 K and at 77 K, respectively.


Generic image for table
Table I.

Sample labeling and basic parameters at room temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excess carrier recombination lifetime of bulk n-type 3C-SiC