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Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si
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10.1063/1.3273860
/content/aip/journal/apl/95/24/10.1063/1.3273860
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3273860
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Upper panel: AFM image of GaAs QMs grown on a GeVS. Lower panel: AFM profile of a QM.

Image of FIG. 2.
FIG. 2.

PL spectra of the QM600 sample (RTA at ) measured at RT (upper spectrum) and (center spectrum). The RT spectrum is scaled by a factor 400. The emission (scaled by a factor 10) from the blank sample, annealed at , at is also reported (bottom spectrum). Diamonds indicate GaAs bulk related emission.

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/content/aip/journal/apl/95/24/10.1063/1.3273860
2009-12-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3273860
10.1063/1.3273860
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