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Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals
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10.1063/1.3273861
/content/aip/journal/apl/95/24/10.1063/1.3273861
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3273861
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of tunneling capacitor devices containing size-controlled silicon nanocrystals. (b) Energy band diagram of the devices.

Image of FIG. 2.
FIG. 2.

(a) hysteresis curves for the devices obtained at of and −9 V for electron and hole injection time of 1 s, respectively. The control sample is a device without silicon nanocrystals. (b) , at which a significant carrier injection is initiated, and as a function of the diameter of the silicon nanocrystals. (c) Schematic of the conduction band diagram under a positive gate bias, showing the available potential depth for electron injection.

Image of FIG. 3.
FIG. 3.

Injection time dependence of characteristics for (a) electron and (b) hole injections. A of and −9 V was applied to inject electrons and holes, respectively.

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/content/aip/journal/apl/95/24/10.1063/1.3273861
2009-12-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3273861
10.1063/1.3273861
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