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(a) Schematic of tunneling capacitor devices containing size-controlled silicon nanocrystals. (b) Energy band diagram of the devices.
(a) hysteresis curves for the devices obtained at of and −9 V for electron and hole injection time of 1 s, respectively. The control sample is a device without silicon nanocrystals. (b) , at which a significant carrier injection is initiated, and as a function of the diameter of the silicon nanocrystals. (c) Schematic of the conduction band diagram under a positive gate bias, showing the available potential depth for electron injection.
Injection time dependence of characteristics for (a) electron and (b) hole injections. A of and −9 V was applied to inject electrons and holes, respectively.
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