Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects
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(a) Temperature dependence of the sheet carrier density (closed circles) and the mobility (open circles). (b) Magnetic field dependence of the longitudinal (red line) and the Hall resistance (black line) at 1.8 K.
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(a) SdH oscillations at low magnetic field at 1.8 K. The black, red, and blue lines show the measured data and the simulation data with and without the Rashba SOI, respectively. The location of the beating node at is indicated by the arrow. The increase of the measured magnetoresistance at is likely due to diffusive boundary scattering. (b) FFT analysis of the SdH oscillations between 0.15 and . The arrows indicate the location of two channels. (c) Band structure and wave function in the heterostructure obtained by self-consistent Schrödinger–Poisson calculations. The donor concentrations of and in the InAs and AlGaSb layers, respectively, and the acceptor concentration of in the AlSb layers were assumed. The band bending of the bandstructure at the QW is due to charge transfer from the surface. The estimated carrier density at the QW region is and . Here, is the first subband energy in QW. The solid horizontal line in QW and the dashed line indicate the location of and , respectively.
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