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Nonlinear current-voltage behavior and giant positive magnetoresistance in nonmagnetic Au/Yttria-stabilized zirconia/Si heterostructures
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10.1063/1.3274130
/content/aip/journal/apl/95/24/10.1063/1.3274130
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3274130
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Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction pattern for YSZ/Si heterostructures. (b) The cross-section TEM image of YSZ/Si heterostructures. The inset is the high-resolution TEM image near the interface.

Image of FIG. 2.
FIG. 2.

MR as a function of the magnetic field for Au/YSZ/Si heterostructures at 300, 100, and 50 K (a) and 20 K with a forward bias voltage of 4 V (b). The insets are the curves measured at 300 K (a) and 20 K (b) with and 7 T, respectively.

Image of FIG. 3.
FIG. 3.

(a) Forward bias voltage dependence of MR at different temperatures in a magnetic field of 7 T. (b), (c), (d) show MR vs voltage at 20, 30, 50, and 100 K with magnetic field perpendicular and parallel to the current, respectively.

Image of FIG. 4.
FIG. 4.

(a) curves plotted as vs at different temperatures. (b) vs . (c) The schematic band diagram of Au/YSZ/Si heterostructure for the trap-assisted FN tunneling. (d) A schematic diagram for electron tunneling through a triangular barrier with and without a magnetic field.

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/content/aip/journal/apl/95/24/10.1063/1.3274130
2009-12-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonlinear current-voltage behavior and giant positive magnetoresistance in nonmagnetic Au/Yttria-stabilized zirconia/Si heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3274130
10.1063/1.3274130
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