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(a) X-ray diffraction pattern for YSZ/Si heterostructures. (b) The cross-section TEM image of YSZ/Si heterostructures. The inset is the high-resolution TEM image near the interface.
MR as a function of the magnetic field for Au/YSZ/Si heterostructures at 300, 100, and 50 K (a) and 20 K with a forward bias voltage of 4 V (b). The insets are the curves measured at 300 K (a) and 20 K (b) with and 7 T, respectively.
(a) Forward bias voltage dependence of MR at different temperatures in a magnetic field of 7 T. (b), (c), (d) show MR vs voltage at 20, 30, 50, and 100 K with magnetic field perpendicular and parallel to the current, respectively.
(a) curves plotted as vs at different temperatures. (b) vs . (c) The schematic band diagram of Au/YSZ/Si heterostructure for the trap-assisted FN tunneling. (d) A schematic diagram for electron tunneling through a triangular barrier with and without a magnetic field.
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