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(a) Sample structure for the double QD layer membrane photonic crystals. (b) Simulated band energy diagram of the structure in cross section with air in place of the AlGaAs layer. The conduction band and the valence band are shown. The Fermi energy is zero eV, and the calculated dc electric field is also indicated.
Simulated optical field amplitude in the (a) x-y plane and (b) x-z plane of the membrane in a L3 photonic crystal defect cavity with a 190 nm thick membrane. The simulated frequency is 304.12 THz (986 nm), and the lattice constant and hole radius are 240 nm and 74 nm, respectively.
SEM images of (a) an isolated p-i-n diode device, and (b) a fabricated photonic crystal cavity. (c) Measured cavity mode with Q of .
Stark shift tuning in a L3 cavity . The cavity mode is the line at . Two clear QD emission lines are shown at 970.7 nm (QD1) and 983 nm (QD2). These QDs are in the bottom QD layer and show no voltage dependence. QDs in the top QD layer (QD3 and QD4) show Stark shift tuning with an applied voltage. The graphs in the bottom show the photoluminescence spectra at various applied voltages (1.27, 1.3, and 1.33 V).
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