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Polarization switching characteristics of thin films epitaxially grown on Pt/MgO at a low temperature
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10.1063/1.3275012
/content/aip/journal/apl/95/24/10.1063/1.3275012
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275012
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Theta-2theta XRD pattern of the BFO/Pt/MgO capacitor. Inset: a magnified view of the overlapping region. (b) XRD phi-scan spectra of the [001]-oriented BFO and Pt layers, together with the phi-scan spectrum of the MgO (001) substrate. (c) Symmetric RSM for (002) reflection. (d) Asymmetric RSM for (103) reflection within the reciprocal space of MgO.

Image of FIG. 2.
FIG. 2.

(a) hysteresis loop measured at 1 kHz under a triangular bipolar electric field, and (b) hysteresis loop of the BFO/Pt/MgO capacitor measured at 298 K.

Image of FIG. 3.
FIG. 3.

Electrical fatigue characteristics of the Au(Ti)/BFO/Pt/MgO capacitor. A switching field of 300 kV/cm and a measuring field of 400 kV/cm were used in the fatigue test. The vertical bar on each data point reflects three independent measurements.

Image of FIG. 4.
FIG. 4.

(a) Four distinct pulse sequences employed for measuring the charge retention of , , , and , and (b) the retained charge plotted as a function of the relaxation time of the Au(Ti)/BFO/Pt/MgO capacitor.

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/content/aip/journal/apl/95/24/10.1063/1.3275012
2009-12-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275012
10.1063/1.3275012
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