banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Polarization switching characteristics of thin films epitaxially grown on Pt/MgO at a low temperature
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Theta-2theta XRD pattern of the BFO/Pt/MgO capacitor. Inset: a magnified view of the overlapping region. (b) XRD phi-scan spectra of the [001]-oriented BFO and Pt layers, together with the phi-scan spectrum of the MgO (001) substrate. (c) Symmetric RSM for (002) reflection. (d) Asymmetric RSM for (103) reflection within the reciprocal space of MgO.

Image of FIG. 2.
FIG. 2.

(a) hysteresis loop measured at 1 kHz under a triangular bipolar electric field, and (b) hysteresis loop of the BFO/Pt/MgO capacitor measured at 298 K.

Image of FIG. 3.
FIG. 3.

Electrical fatigue characteristics of the Au(Ti)/BFO/Pt/MgO capacitor. A switching field of 300 kV/cm and a measuring field of 400 kV/cm were used in the fatigue test. The vertical bar on each data point reflects three independent measurements.

Image of FIG. 4.
FIG. 4.

(a) Four distinct pulse sequences employed for measuring the charge retention of , , , and , and (b) the retained charge plotted as a function of the relaxation time of the Au(Ti)/BFO/Pt/MgO capacitor.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature