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Thermal stability and spin-transfer switchings in MgO-based magnetic tunnel junctions with ferromagnetically and antiferromagnetically coupled synthetic free layers
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10.1063/1.3275753
/content/aip/journal/apl/95/24/10.1063/1.3275753
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275753

Figures

Image of FIG. 1.
FIG. 1.

(a) Resistance of the MTJ as a function of external magnetic field . (b) Time-dependence of output voltage measured under of 0.5 mA and of 127 Oe. In this case, the switching time was 22 ms. (c) Cumulative switching probability as a function of time. Open circles and the solid line represent experimental results and least-squares fitting to Eq. (1) with . (d) as a function of . Solid symbols represent experiments under . Solid lines represent least-squares fitting to Eq. (2).

Image of FIG. 2.
FIG. 2.

(a) and (b) as a function of for F-coupled Sy (solid symbols) and AF-coupled Sy (open symbols). Solid lines shown in (a) are least-squares fitting to Eq. (3). The -intercepts correspond to and and the -intercepts to and . Solid lines in (b) are linearly fitted. The -intercepts correspond to and .

Tables

Generic image for table
Table I.

, , and of the MTJs with the CoFeB/Ru/CoFeB synthetic free layers. F-coupled Sy (AF-coupled Sy) corresponds to the ferromagnetically (antiferromagnetically) coupled synthetic free layer. The values represent averages of several samples.

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/content/aip/journal/apl/95/24/10.1063/1.3275753
2009-12-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability and spin-transfer switchings in MgO-based magnetic tunnel junctions with ferromagnetically and antiferromagnetically coupled synthetic free layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275753
10.1063/1.3275753
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