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(a) Schematic cross section of the layer structure. (b) Sketch of the QD-Flash prototype. Hall-contacts are used for transport measurements of the 2DHG.
Schematic illustration of the storage (a), write (b), and erase (c) operations in the QD-Flash prototype.
(a) Hysteresis at 50 K. (b) Temperature dependence of the hysteresis opening for a sweep time of 1 and 100 ms, respectively.
Drain current transients at 50 K at a storage voltage of 0 V (a), 0.4 V (b), and 0.7 V (c). Insets show the valence band profiles at the given voltages.
Write times (a) and erase times (b) in dependence on the pulse voltage.
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