Full text loading...
(a) A cross-sectional SEM image of vertically aligned porous SiNW array prepared by Ag nanoparticle assisted chemical etching in HF- solution. (b) TEM image and SAED pattern (inset) of an individual porous SiNW.
(a) Schematic illustration of the SiNWs gas sensor device. [(b) and (c)] Dynamic electrical resistance responses of the SiNW gas sensor to NO in dry air at room temperature. The normalized electrical resistance change is plotted as a function of time with the sensor device exposed to NO concentrations from 500 ppb to 100 ppm.
Normalized electrical resistance change of porous SiNWs assembly sensor device to NO at various concentrations, where the fitted curve using is plotted together with the experimental data.
Article metrics loading...