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Gas sensing properties of single crystalline porous silicon nanowires
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10.1063/1.3275794
/content/aip/journal/apl/95/24/10.1063/1.3275794
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275794
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A cross-sectional SEM image of vertically aligned porous SiNW array prepared by Ag nanoparticle assisted chemical etching in HF- solution. (b) TEM image and SAED pattern (inset) of an individual porous SiNW.

Image of FIG. 2.
FIG. 2.

(a) Schematic illustration of the SiNWs gas sensor device. [(b) and (c)] Dynamic electrical resistance responses of the SiNW gas sensor to NO in dry air at room temperature. The normalized electrical resistance change is plotted as a function of time with the sensor device exposed to NO concentrations from 500 ppb to 100 ppm.

Image of FIG. 3.
FIG. 3.

Normalized electrical resistance change of porous SiNWs assembly sensor device to NO at various concentrations, where the fitted curve using is plotted together with the experimental data.

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/content/aip/journal/apl/95/24/10.1063/1.3275794
2009-12-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gas sensing properties of single crystalline porous silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3275794
10.1063/1.3275794
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