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Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
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10.1063/1.3276066
/content/aip/journal/apl/95/24/10.1063/1.3276066
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3276066
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of surface of a GaN layer deposited upon five-pair MQW structure with (a) only GaN barriers, (b) only bulk barriers, and (c) only MLBs.

Image of FIG. 2.
FIG. 2.

PL lifetime as a function of bias voltage for the reference LED (R01) and the LED with two MLBs (M11).

Image of FIG. 3.
FIG. 3.

(a) Optical power as a function of current density and (b) external quantum efficiency of the reference LED and the LEDs with the MLB structure.

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/content/aip/journal/apl/95/24/10.1063/1.3276066
2009-12-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/24/10.1063/1.3276066
10.1063/1.3276066
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