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Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing
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10.1063/1.3259654
/content/aip/journal/apl/95/25/10.1063/1.3259654
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3259654
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD Si(111) peak amplitude vs anneal time for samples containing different film . The laser intensity in the laser treated samples is .

Image of FIG. 2.
FIG. 2.

XRD Si(111) peak amplitude vs laser fluence for a-Si:H samples containing H.

Image of FIG. 3.
FIG. 3.

Cluster density, extrapolated from film incubation times, for a H a-Si:H sample in the as grown state, and for one shot laser fluences of 36 and .

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/content/aip/journal/apl/95/25/10.1063/1.3259654
2009-12-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3259654
10.1063/1.3259654
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