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Low voltage active pressure sensor based on polymer space-charge-limited transistor
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1.R. H. Reuss, B. R. Chalamala, A. Moussessian, M. G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M. Hatalis, D. Temple, G. Moddel, B. J. Eliasson, M. J. Estes, J. Kunze, E. S. Handy, E. S. Harmon, D. B. Salzman, J. M. Woodall, M. A. Alam, J. Y. Murthy, S. C. Jacobsen, M. Olivier, D. Markus, P. M. Campbell, and E. Snow, Proc. IEEE 93, 1239 (2005).
http://dx.doi.org/10.1109/JPROC.2005.851237
2.
2.E. C. Chen, J. H. Ju, C. M. Yang, S. F. Horng, S. R. Tseng, H. F. Meng, and C. F. Shu, Appl. Phys. Lett. 93, 063304 (2008).
http://dx.doi.org/10.1063/1.2949069
3.
3.I. Manunza, A. Sulis, and A. Bonfiglio, Appl. Phys. Lett. 89, 143502 (2006).
http://dx.doi.org/10.1063/1.2357924
4.
4.S. Jung, T. Ji, and V. K. Varadan, Appl. Phys. Lett. 90, 062105 (2007).
http://dx.doi.org/10.1063/1.2450646
5.
5.V. J. Lumelsky, M. S. Shur, and S. Wagner, IEEE Sens. J. 1, 41 (2001).
http://dx.doi.org/10.1109/JSEN.2001.923586
6.
6.Y. Noguchi, T. Sekitani, and T. Someya, Appl. Phys. Lett. 89, 253507 (2006).
http://dx.doi.org/10.1063/1.2416001
7.
7.T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, and T. Sakurai, Proc. Natl. Acad. Sci. U.S.A. 101, 9966 (2004).
http://dx.doi.org/10.1073/pnas.0401918101
8.
8.Y. Yang and A. J. Heeger, Nature (London) 372, 344 (1994).
http://dx.doi.org/10.1038/372344a0
9.
9.Y. C. Chao, S. L. Yang, H. F. Meng, and S. F. Horng, Appl. Phys. Lett. 87, 253508 (2005).
http://dx.doi.org/10.1063/1.2149219
10.
10.Y. C. Chao, M. H. Xie, M. Z. Dai, H. F. Meng, S. F. Horng, and C. S. Hsu, Appl. Phys. Lett. 92, 093310 (2008).
http://dx.doi.org/10.1063/1.2839395
11.
11.K. Kudo, D. X. Wang, M. Iizuka, S. Kuniyoshi, and K. Tanaka, Synth. Met. 111, 11 (2000).
http://dx.doi.org/10.1016/S0379-6779(99)00404-X
12.
12.Y. Watanabe and K. Kudo, Appl. Phys. Lett. 87, 223505 (2005).
http://dx.doi.org/10.1063/1.2137900
13.
13.K. Fujimoto, T. Hiroi, K. Kudo, and M. Nakamura, Adv. Mater. 19, 525 (2007).
http://dx.doi.org/10.1002/adma.200601736
14.
14.Y. C. Chao, H. F. Meng, and S. F. Horng, Appl. Phys. Lett. 88, 223510 (2006).
http://dx.doi.org/10.1063/1.2207838
15.
15.Y. C. Chao, H. F. Meng, S. F. Horng, and C. S. Hsu, Org. Electron. 9, 310 (2008).
http://dx.doi.org/10.1016/j.orgel.2007.11.012
16.
16.J. Huang, M. Yi, D. Ma, and I. A. Hümmelgen, Appl. Phys. Lett. 92, 232111 (2008).
http://dx.doi.org/10.1063/1.2937403
17.
17.T. Ding, L. Wang, and P. Wang, J. Polym. Sci., Part B: Polym. Phys. 45, 2700 (2007).
http://dx.doi.org/10.1002/polb.21272
18.
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FIG. 1.

(a) The schematic device structure. The left part shows the device structure without pressure applied. The right part shows the device structure under pressure. Different graphite particles distributions in PDMS are also shown. The conductive paths break at the place indicated by red dashed circles. (b) The potential profile along the emitter—collector path through the opening when is fixed at a negative value. Curve (x) is a potential profile with energy barrier for hole. Curve (y) is a potential profile without energy barrier for hole for a positive enough grid potential . (c) Circuit diagram of one active pressure sensor.

Image of FIG. 2.

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FIG. 2.

(a) and (b) as a function of at various grid voltages of the pressure sensor with 2000 Å opening on Al grid.

Image of FIG. 3.

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FIG. 3.

The response of (a) and (b) under various pressure. is −0.8 and 3.3 V. is biased at −4 V.

Image of FIG. 4.

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FIG. 4.

The response of the pressure sensitive rubber. The inset shows the measuring circuit.

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/content/aip/journal/apl/95/25/10.1063/1.3266847
2009-12-23
2014-04-21

Abstract

Low voltage active pressuresensor is realized by vertically stacking a pressure sensitive rubber on a polymer space-charge-limited transistor. The sensor can be turned on and off by modulating the metal-grid base voltage within the range of 3 V. The output current is irrelevant to the pressure as the sensor is off. As the sensor is turned on, the output current values can be used to monitor the pressure. Reversible pressure sensing characteristics is observed below the pressure of 7.11 psi. The response time of the sensor to the pressure is as short as 22 ms.

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Scitation: Low voltage active pressure sensor based on polymer space-charge-limited transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3266847
10.1063/1.3266847
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