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Bandstructure of one active region cascade (i.e., injector plus W-QW) of the investigated ICL devices for an electric field of 85 kV/cm. Layer thicknesses are similar to the one published in Ref. 16, but with the barriers replaced by binary AlSb. The optical transitions in the W-QWs are schematically indicated via two arrows.
Emission spectra of six ICL BA devices with QW1 thicknesses ranging from 1.85 to taken in pulsed operation at a heat sink temperature of 77 K covering a spectral range from 2.97 to . The lasers’ respective QW1 thicknesses are marked with squares, yielding a linear tuning rate of wavelength shift per monolayer of InAs.
Peak emission wavelengths of PL samples (triangles) and ICL devices (squares) at 77 K vs QW1 thickness together with theoretical eight band kp calculations (solid line).
Temperature dependent measurements of a shallow etched ICL BA device resulting in a slope of 1.88 nm/K from 150 K to RT.
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