1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhanced shot noise in carbon nanotube field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.3274128
/content/aip/journal/apl/95/25/10.1063/1.3274128
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3274128
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Fano factor as a function of the gate overdrive for (a) (25,0) and (b) (13,0) CNT-FETs for . The different contributions , , , and the total Fano factor are shown. The threshold voltage is 0.43 V for the (13,0) CNT-FET, and 0.36 V for the (25,0) CNT-FET.

Image of FIG. 2.
FIG. 2.

If an excess hole tunnels from the drain into a bound state in the intrinsic channel (a), the conduction band and valence band edge profiles are shifted downwards and more thermionic electrons can be injected in the channel, enhancing current fluctuations (b).

Image of FIG. 3.
FIG. 3.

as a function of the number of electrons in the channel for (a) (25,0) and (b) (13,0) CNT-FETs. (c) LDOS as a function of the longitudinal direction for . (d) Scatter plot of electrons and holes in the channel.

Image of FIG. 4.
FIG. 4.

(a) , , and when randomizing the occupancy at different energy regions and at different reservoirs [source (s): I and II; drain (d): III and IV] for . (b) , , and at as a function of temperature and (c) as a function of for .

Loading

Article metrics loading...

/content/aip/journal/apl/95/25/10.1063/1.3274128
2009-12-23
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced shot noise in carbon nanotube field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3274128
10.1063/1.3274128
SEARCH_EXPAND_ITEM