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Enhanced shot noise in carbon nanotube field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

Fano factor as a function of the gate overdrive for (a) (25,0) and (b) (13,0) CNT-FETs for . The different contributions , , , and the total Fano factor are shown. The threshold voltage is 0.43 V for the (13,0) CNT-FET, and 0.36 V for the (25,0) CNT-FET.

Image of FIG. 2.
FIG. 2.

If an excess hole tunnels from the drain into a bound state in the intrinsic channel (a), the conduction band and valence band edge profiles are shifted downwards and more thermionic electrons can be injected in the channel, enhancing current fluctuations (b).

Image of FIG. 3.
FIG. 3.

as a function of the number of electrons in the channel for (a) (25,0) and (b) (13,0) CNT-FETs. (c) LDOS as a function of the longitudinal direction for . (d) Scatter plot of electrons and holes in the channel.

Image of FIG. 4.
FIG. 4.

(a) , , and when randomizing the occupancy at different energy regions and at different reservoirs [source (s): I and II; drain (d): III and IV] for . (b) , , and at as a function of temperature and (c) as a function of for .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced shot noise in carbon nanotube field-effect transistors