Full text loading...
Fano factor as a function of the gate overdrive for (a) (25,0) and (b) (13,0) CNT-FETs for . The different contributions , , , and the total Fano factor are shown. The threshold voltage is 0.43 V for the (13,0) CNT-FET, and 0.36 V for the (25,0) CNT-FET.
If an excess hole tunnels from the drain into a bound state in the intrinsic channel (a), the conduction band and valence band edge profiles are shifted downwards and more thermionic electrons can be injected in the channel, enhancing current fluctuations (b).
as a function of the number of electrons in the channel for (a) (25,0) and (b) (13,0) CNT-FETs. (c) LDOS as a function of the longitudinal direction for . (d) Scatter plot of electrons and holes in the channel.
(a) , , and when randomizing the occupancy at different energy regions and at different reservoirs [source (s): I and II; drain (d): III and IV] for . (b) , , and at as a function of temperature and (c) as a function of for .
Article metrics loading...