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Effects of gate-first and gate-last process on interface quality of metal-oxide-semiconductor capacitors using atomic-layer-deposited and oxides
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10.1063/1.3275001
/content/aip/journal/apl/95/25/10.1063/1.3275001
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275001
/content/aip/journal/apl/95/25/10.1063/1.3275001
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/content/aip/journal/apl/95/25/10.1063/1.3275001
2009-12-22
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275001
10.1063/1.3275001
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