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Effects of gate-first and gate-last process on interface quality of metal-oxide-semiconductor capacitors using atomic-layer-deposited and oxides
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10.1063/1.3275001
/content/aip/journal/apl/95/25/10.1063/1.3275001
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275001

Figures

Image of FIG. 1.
FIG. 1.

C-V characteristics of and MOSCAPs as a function of frequencies from 1 MHz to 500 Hz at room temperature using PDA-only process and G-first process (, at ).

Image of FIG. 2.
FIG. 2.

vs energy position at band gap for InGaAs MOSCAPs with and oxides using PDA-only, G-first, and G-last process.

Image of FIG. 3.
FIG. 3.

XPS spectra of , , and after applying PDA-only, G-first, and G-last process for structure.

Image of FIG. 4.
FIG. 4.

XPS spectra of , , and after applying PDA-only, G-first, and G-last process for structure.

Image of FIG. 5.
FIG. 5.

High-resolution bright-field TEM [(a)–(b)], dark-field TEM [(c)–(d)], and EELS [(e)–(f)] of MOSCAPs with using G-first and G-last process.

Tables

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Table I.

Process flow chart.

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/content/aip/journal/apl/95/25/10.1063/1.3275001
2009-12-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275001
10.1063/1.3275001
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