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Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic illustration of the steps to fabricate crossbar heterojunction devices. The blue, gray pink, and gray layers denote boron-doped Si surface layer, thermal oxidized interlayer, and heavily phosphor-doped Si substrate in a SOI wafer. The green and yellow patterns are the working electrodes for positioning NWs and top contact electrodes, respectively.

Image of FIG. 2.
FIG. 2.

(a) low- and (b) high-magnification SEM images of a Si NR array formed on an SOI substrate. (c) low- and (d) high-magnification SEM images of the crossbar heterojunction device array.

Image of FIG. 3.
FIG. 3.

curves of (a) a -type Si NR and (b) a -type CdSe:In NW. (c) Typical rectification behavior observed in group A junctions. The turn-on voltage is around 1 V. (d) Typical characteristics observed in group B devices. The turn-on voltage is over 5 V.

Image of FIG. 4.
FIG. 4.

(a) -dependent characteristics of a crossbar JFET. The inset shows the schematic diagram of the crossbar JFET constructed with Si NR as a gate and CdSe:In NW as an S-D channel. (b) curve measured at . A depletion layer with its thickness controlled by is formed at Si NR and CdSe:In NW interface, as depicted in the inset.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons