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Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar GaN free standing substrates
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10.1063/1.3275717
/content/aip/journal/apl/95/25/10.1063/1.3275717
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275717
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic depicting hexagonal GaN wurtzite lattice. Basal plane vectors , , , and normal vector are also indicated besides the plane. (b) Perspective view of an (Al,In)GaN heteroepitaxial layer grown on GaN. The glide plane (0001), a misfit dislocation (MD) at the heterointerface and the three possible orientations of the corresponding Burgers vector are indicated. (c) cross-section schematic illustrating the projected , , and vectors.

Image of FIG. 2.
FIG. 2.

AFM scans of (a) 200-period 2.5 nm/2.5 nm -AlGaN/GaN SL ( scan area) and (b) -InGaN ( scan area) grown on GaN.

Image of FIG. 3.
FIG. 3.

(a) Two-beam cross-section image of the full LD structure—MDs are clearly visible at the both the lower and upper AlGaN SPSL cladding/GaN interfaces, and the InGaN/AlGaN cladding interfaces. (b) Magnified image of the lower -AlGaN/GaN SPSL cladding/-GaN interface.

Image of FIG. 4.
FIG. 4.

HRXRD RSM around the symmetric GaN reflection for the full LD structure. The in-plane projection of the x-ray beam was aligned parallel to (a) and (b) , respectively.

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/content/aip/journal/apl/95/25/10.1063/1.3275717
2009-12-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275717
10.1063/1.3275717
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