1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
f
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar GaN free standing substrates
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/95/25/10.1063/1.3275717
1.
1.H. Ohta and K. Okamoto, Mater. Res. Bull. 34, 324 (2009).
2.
2.K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 94, 071105 (2009).
http://dx.doi.org/10.1063/1.3078818
3.
3.Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 2, 082102 (2009).
http://dx.doi.org/10.1143/APEX.2.082102
4.
4.H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 92, 221110 (2008).
http://dx.doi.org/10.1063/1.2938062
5.
5.A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 1, 091103 (2008).
http://dx.doi.org/10.1143/APEX.1.091103
6.
6.D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. -E. Zah, Appl. Phys. Express 2, 071001 (2009).
http://dx.doi.org/10.1143/APEX.2.071001
7.
7.Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, Appl. Phys. Express 2, 092101 (2009).
http://dx.doi.org/10.1143/APEX.2.092101
8.
8.K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek, H. K. Kim, M. Y. Kim, K. H. Ha, H. Y. Ryu, O. H. Nam, T. Jang, and Y. J. Park, Appl. Phys. Lett. 92, 101103 (2008).
http://dx.doi.org/10.1063/1.2892634
9.
9.J. S. Speck and S. F. Chichibu, Mater. Res. Bull. 34, 304 (2009).
10.
10.H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, J. Light Visual Environ. 32, 107 (2008).
http://dx.doi.org/10.2150/jlve.32.107
11.
11.J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, New York, 1993).
12.
12.L. B. Freund, Mater. Res. Bull. 17, 52 (1992).
13.
13.D. Hull and D. J. Bacon, Introduction to Dislocations, 3rd ed. (Pergamon, Oxford, 1989).
14.
14.R. Hull and J. C. Bean, Appl. Phys. Lett. 54, 925 (1989).
http://dx.doi.org/10.1063/1.100810
15.
15.M. Bonar, R. Hull, J. F. Walker, and R. Malik, Appl. Phys. Lett. 60, 1327 (1992).
http://dx.doi.org/10.1063/1.107332
16.
16.A. M. Andrews, R. LeSar, M. A. Kerner, J. S. Speck, A. E. Romanov, A. L. Kolesnikova, M. Bobeth, and W. Pompe, J. Appl. Phys. 95, 6032 (2004).
http://dx.doi.org/10.1063/1.1707208
17.
17.K. H. Chang, R. Gibala, D. J. Srolovitz, P. K. Bhattacharya, and J. F. Mansfield, J. Appl. Phys. 67, 4093 (1990).
http://dx.doi.org/10.1063/1.344968
18.
18.A. E. Romanov, P. Waltereit, and J. S. Speck, J. Appl. Phys. 97, 043708 (2005).
http://dx.doi.org/10.1063/1.1851016
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275717
Loading
/content/aip/journal/apl/95/25/10.1063/1.3275717
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/95/25/10.1063/1.3275717
2009-12-23
2014-12-28

Abstract

Misfit strain relaxation via misfit dislocation (MD) generation was observed in heteroepitaxially grown (Al,In)GaN layers on free-standing semipolar GaN substrates. Cross-section transmission electron microscope images revealed MD arrays at alloy heterointerfaces, with the MD line direction and Burgers vector parallel to and , respectively. The MD structure is consistent with plastic relaxation by dislocation glide on the (0001) plane. Since (0001) is the only slip plane, the plastic relaxation is associated with tilt of the epitaxial (Al,In)GaN layers. The tilt, measured via high-resolution x-ray diffraction, can be used to quantify the relaxation.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/95/25/1.3275717.html;jsessionid=75j4hnd4er28i.x-aip-live-03?itemId=/content/aip/journal/apl/95/25/10.1063/1.3275717&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275717
10.1063/1.3275717
SEARCH_EXPAND_ITEM