1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A theoretical study of the initial oxidation of the surface
Rent:
Rent this article for
USD
10.1063/1.3275737
/content/aip/journal/apl/95/25/10.1063/1.3275737
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275737
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Mechanism of oxidation of the GaAs(001) surface: (a) Initial oxidation, vertical growth of the oxide layer; (b) oxidation of the inner layer: stress accumulation at the interface; (c) stress release by a Ga atom ejection into the oxide layer with a vacancy generated at the interface; (d) filling of the vacancy by a neighboring atom and formation of an As antisite defect (As, Ga, and O atoms are depicted by white, black, and gray balls, respectively).

Image of FIG. 2.
FIG. 2.

An atom ejection event during the oxidation: the z-projection the trajectory of a Ga atom ejected in the above amorphous oxide layer is shown (black curve), compared with the trajectory of a nonejected one, whose fluctuations indicate thermal vibrations within the oxidizing layer.

Image of FIG. 3.
FIG. 3.

Computed electronic DOS for the reconstructed GaAs(001) surface (dashed line), an oxidized surface before atom ejection (gray line), and after the occurrence of such event (black line). Energy levels are introduced in the bandgap by the formation of structural defects at the interface during the oxidation; is the GaAs valence band edge.

Loading

Article metrics loading...

/content/aip/journal/apl/95/25/10.1063/1.3275737
2009-12-23
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275737
10.1063/1.3275737
SEARCH_EXPAND_ITEM