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Side-view scanning-electron micrograph of the IJJ stack structure in the BSCCO crystal. The intrinsic junctions are located in the region where the bias current flow is parallel to the -axis. The glue can be seen underneath the crystal.
characteristics at with no rf irradiation. Only the branches are shown.
(a) Switching currents for different branches are plotted as a function of the rf current in arbitrary units. The sample temperature is 4.2 K. The lines are guides to the eye. (b) rf current source model for a stack of N intrinsic Josephson junctions. Junctions are indicated by a cross.
(a) Branch dependence of the magnitude of the normalized rf source current required to suppress the switching current to a fixed value as indicated. The lines are linear fits to the experimental data in the range to . (b) The slope of the linear fits to the plots in (a) as a function of the junction slope resistance . The line shows the best linear fit being forced to pass through the origin to the data, from which can be extracted.
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