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Capacitor structure using DPA–CM in PMMA film and chemical structures of DPA–CM at ground state and CS state after photoirradiation.
Frequency dependence of dielectric permittivity of the capacitor using DPA–CM in PMMA film measured under dark conditions (closed mark) and with photoirradiation (open mark). The light intensity was . Inset: Reversible change in the dielectric permittivity on photoirradiation.
Light intensity dependence of dielectric permittivity of the capacitor using DPA–CM in PMMA film .
ESR spectra of DPA–CM in PMMA (5.0 wt%) film observed (a) under dark conditions (broken line) and with photoirradiation (solid line) at 298 K and (b) after cutting off the photoirradiation at 77 K. Asterisks denote the signals due to zero-field splitting. (c) Time profile of ESR signal intensity at 3218 G observed at 298 K.
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