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Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
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10.1063/1.3275801
/content/aip/journal/apl/95/25/10.1063/1.3275801
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275801
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM analysis of IZO films [(a) and (b)] and HIZO (0.3) films [(c) and (d)]. (a) Cross-section view of IZO films, (b) high resolution cross-section view and FFT of IZO film, (c) cross-section view of HIZO (0.3), and (d) high resolution cross-section view and FFT of HIZO (0.3) film.

Image of FIG. 2.
FIG. 2.

(a) Carrier concentration and Hall mobility as a function of the Hf content. (b) Carrier concentration of the HIZO (0.1) and (0.3) films at different annealing temperatures.

Image of FIG. 3.
FIG. 3.

(a) Transfer characteristics and (b) output curve of HIZO (0.3) TFTs.

Image of FIG. 4.
FIG. 4.

The variation of for the HIZO (0.1) and (0.3) TFTs as a function of the BTS time. The following condition of BTS was applied to both TFTs: a of 20 V, of 10 V, and substrate temperature of . The TFTs were kept under the BTS condition for 16 h.

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/content/aip/journal/apl/95/25/10.1063/1.3275801
2009-12-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275801
10.1063/1.3275801
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