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TEM analysis of IZO films [(a) and (b)] and HIZO (0.3) films [(c) and (d)]. (a) Cross-section view of IZO films, (b) high resolution cross-section view and FFT of IZO film, (c) cross-section view of HIZO (0.3), and (d) high resolution cross-section view and FFT of HIZO (0.3) film.
(a) Carrier concentration and Hall mobility as a function of the Hf content. (b) Carrier concentration of the HIZO (0.1) and (0.3) films at different annealing temperatures.
(a) Transfer characteristics and (b) output curve of HIZO (0.3) TFTs.
The variation of for the HIZO (0.1) and (0.3) TFTs as a function of the BTS time. The following condition of BTS was applied to both TFTs: a of 20 V, of 10 V, and substrate temperature of . The TFTs were kept under the BTS condition for 16 h.
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