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Enhanced photoluminescence of strained Ge with a -doping SiGe layer on silicon and silicon-on-insulator
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10.1063/1.3275863
/content/aip/journal/apl/95/25/10.1063/1.3275863
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275863
/content/aip/journal/apl/95/25/10.1063/1.3275863
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/content/aip/journal/apl/95/25/10.1063/1.3275863
2009-12-21
2014-12-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3275863
10.1063/1.3275863
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