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[(a)–(c)] Surface morphology images of sample A, B, and C of Ge on Si with various doped SiGe layers.
Typical double crystal XRD rocking curves of Ge on Si with a SiGe layer and the simulated results based on the dynamical XRD theory.
(a) Room temperature photoluminescence of tensile strained Ge on Si with -doping SiGe layers and (b) the schematic of bandgap of Ge/phosphorous-doped SiGe structure.
Double crystal XRD rocking curves of Ge on Si and SOI substrates.
Comparison of room temperature photoluminescence of Ge on Si and SOI substrates.
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