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-type conduction in beryllium-implanted hexagonal boron nitride films
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10.1063/1.3276065
/content/aip/journal/apl/95/25/10.1063/1.3276065
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3276065
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Figures

Image of FIG. 1.
FIG. 1.

UV-VIS transmission spectra of sapphire reference substrate and sapphire coated with a 500 nm thick hBN film. Inset shows the cross-sectional SEM image of the hBN film on sapphire. The room-temperature CL spectra of hBN films as-deposited and after Be-implantation and RTA are also shown.

Image of FIG. 2.
FIG. 2.

Depth profile of Be and Ar ions implanted in hBN at an ion energy 50 keV and a fluence of calculated by SRIM 2006. the inset shows the SEM cross-sectional morphology of a 800 nm thick hBN film grown on Si substrate.

Image of FIG. 3.
FIG. 3.

UV Raman spectra of as-deposited, implanted and RTA-treated hBN films. The ion fluence is .

Image of FIG. 4.
FIG. 4.

(a) characteristics of as-deposited, Be-implanted, and RTA-treated hBN films (right side). The left side shows the corresponding curves obtained from the reference sample by Ar implantation. (b) The temperature dependence of the sheet resistance of hBN films after Be-ion implantation and RTA. The ion fluence is .

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/content/aip/journal/apl/95/25/10.1063/1.3276065
2009-12-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type conduction in beryllium-implanted hexagonal boron nitride films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/25/10.1063/1.3276065
10.1063/1.3276065
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