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Upper: schematic cross-section of the TL and SIS junction. The rf radiation is collected by a horn with a waveguide (not shown here) and picked up at the probe point. The Nb/Al groundplane forms the proximity coupled bilayer. The Nb topwire on amorphous layer has nonuniform properties (see Ref. 8 ) turning it effectively into a bilayer. Lower: equivalent circuit of the TL with the junction, as well as the antenna and waveguide.
Typically measured and calculated (lines) dc curves of the junction at 4.2 K. A Dynes broadening parameter (Ref. 16 ) of is used for the top Nb electrode. The Josephson current is not included in the fitting. Inset: theoretical predictions of FTS response when only considering the influence of Nb/Al ground plane.
Measured and calculated (lines) FTS responses of the TL at 4.2 K, both of which are normalized to the maximum value of the curve at and , respectively. The atmospheric absorption has been removed from the measured data. The inset shows the full FTS response at .
(a) DOS at the surfaces and interfaces of the Nb/Al bilayer. is the calculated gap energy of bulk Nb. (b) Complex conductivities at the surface of Al layer .
Parameters of Al and Nb films. Nb films are deposited on the amorphous layer. and are interrelated by the intrinsic value of .
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