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Millisecond flash lamp annealing of shallow implanted layers in Ge
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View: Figures


Image of FIG. 1.
FIG. 1.

Depth profiles of P in samples prepared without [(a) and (c)] and with [(b) and (d)] PAI as well as with [(a) and (b)] and without [(c) and (d)] preannealing. The as-implanted profiles are shown by thick black lines. Thin black and gray lines show P depth distributions after flash lamp annealing (FLA) for 3 and 20 ms, respectively. In the cases of 3 and 20 ms flashes the flash energy varied between 39 and 80 kJ as well as between 86 and 139 kJ, respectively.

Image of FIG. 2.
FIG. 2.

P depth distributions obtained after different pretreatments and FLA at higher flash energies than in the case of Fig. 1. (a) Thin gray and black lines show the case of 3 ms FLA at 88 and 97 kJ, respectively, for samples without any pretreatment. The curves with lines and symbols were obtained for 20 ms FLA at 182 kJ (open circles – without any pretreatment, triangles-PAI, stars-PAI and preannealing). (b) Thin lines depict results obtained for 20 ms FLA at 232 kJ (black line – without any pretreatment, dotted line – PAI, gray line – PAI and preannealing).

Image of FIG. 3.
FIG. 3.

Sheet resistance and maximum carrier concentration in the case of 3 ms [(a) and (b)] and 20 ms [(c) and (d)] FLA, for different flash energies and pretreatments. Circles: without any pretreatment, open squares: preannealing, diamonds: PAI, triangles: PAI and preannealing.

Image of FIG. 4.
FIG. 4.

Result of mass action analysis taking into account the formation of clusters : concentration of unbound or active P vs temperature. Different values are assumed for the total vacancy concentration (circles: squares: , diamonds: ), and the total concentration of P is .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Millisecond flash lamp annealing of shallow implanted layers in Ge