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Electronic devices based on GNRs. (a) Schematic of a device. 20-nm-thick e-beam deposited Pt metal serves as the source (s) and drain (d) electrodes. The device is fabricated on a 200 nm thick thermal over heavily doped p-type Si that is used as a back gate (g). (b) Top-view SEM image of a typical electronic device based on a single-layer GNR ( and ). (c) AFM image of a typical monolayer GNR reduced by annealing at in on the substrate. (d) Representative height profile of a monolayer GNR measured along the blue line in (c).
Ambipolar electric field effect in monolayer GNRs reduced in at . Room temperature source-drain current dependence on the gate potential was recorded at for the electronic device based on a 257-nm-wide GNR with the source-drain length of 610 nm. The inset shows curves recorded at different gate voltages for the same electronic device.
Typical temperature dependence of resistance of a GNR ( and ). The inset shows the same data plotted as a logarithm of current at vs ; squares correspond to the experimental data points and the gray line is their linear fit.
TEM image of a monolayer GONR. The inset shows a low-magnification TEM image of another monolayer GONR.
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