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Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes
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View: Figures


Image of FIG. 1.
FIG. 1.

Electronic devices based on GNRs. (a) Schematic of a device. 20-nm-thick e-beam deposited Pt metal serves as the source (s) and drain (d) electrodes. The device is fabricated on a 200 nm thick thermal over heavily doped p-type Si that is used as a back gate (g). (b) Top-view SEM image of a typical electronic device based on a single-layer GNR ( and ). (c) AFM image of a typical monolayer GNR reduced by annealing at in on the substrate. (d) Representative height profile of a monolayer GNR measured along the blue line in (c).

Image of FIG. 2.
FIG. 2.

Ambipolar electric field effect in monolayer GNRs reduced in at . Room temperature source-drain current dependence on the gate potential was recorded at for the electronic device based on a 257-nm-wide GNR with the source-drain length of 610 nm. The inset shows curves recorded at different gate voltages for the same electronic device.

Image of FIG. 3.
FIG. 3.

Typical temperature dependence of resistance of a GNR ( and ). The inset shows the same data plotted as a logarithm of current at vs ; squares correspond to the experimental data points and the gray line is their linear fit.

Image of FIG. 4.
FIG. 4.

TEM image of a monolayer GONR. The inset shows a low-magnification TEM image of another monolayer GONR.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes