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Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes
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10.1063/1.3272679
/content/aip/journal/apl/95/26/10.1063/1.3272679
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3272679
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) EL spectra of InGaN/GaN blue LEDs after turn-on with different injection currents. (b) PL spectra before turn-on and in reverse bias range. (c) Peak positions of PL and EL spectra. (d) PL spectra in open- and short-circuit condition, respectively.

Image of FIG. 2.
FIG. 2.

(Upper panel) Comparison between bias dependent PL spectra and short- and open-circuit PL. (lower panel) I-V curve with the laser illumination.

Image of FIG. 3.
FIG. 3.

(upper panel) Temperature dependent open-circuit voltage and short-circuit current. (Lower panel) Excitation power dependent open-circuit voltage.

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/content/aip/journal/apl/95/26/10.1063/1.3272679
2009-12-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3272679
10.1063/1.3272679
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